BSC040N10NS5

manufacturer: Infineon Product category: MOSFET Installation style: SMD/SMT Package / box: PG-TDSON-8 Transistor polarity: N-Channel Number of channels: 1 Channel VDS - drain source breakdown voltage: 100 V ID - continuous drain current: 100 A RDS on drain source on resistance: 4 mOhms VGS - gate source voltage: - 20 V, + 20 V VGS th gate source threshold voltage: 2.2 V QG gate charge: 58 nC Minimum operating temperature: - 55 C Maximum operating temperature: + 150 C PD power dissipation: 139 W Channel mode: Enhancement Trade name: OptiMOS to configure: Single Height: 1.27 mm Length: 5.9 mm Series: OptiMOS 5 Transistor type: 1 N-Channel Width: 5.15 mm Trademark: Infineon Technologies Forward transconductance - Minimum: 60 S Development Kit: EVAL_ 1K4W_ ZVS_ FB_ CFD7 Descent time: 10 ns Product type: MOSFET Rise time: 9 ns Number of factory packages: five thousand Subcategory: MOSFETs Typical closing delay time: 32 ns Typical on delay time: 13 ns Part number alias: SP001295030 BSC040N10NS5ATMA1 Unit weight: 104.400 mg