BSC440N10NS3G

manufacturer: Infineon Product category: MOSFET Installation style: SMD/SMT Package / box: TDSON-8 Transistor polarity: N-Channel Number of channels: 1 Channel VDS - drain source breakdown voltage: 100 V ID - continuous drain current: 5.3 A RDS on drain source on resistance: 44 mOhms VGS - gate source voltage: - 20 V, + 20 V VGS th gate source threshold voltage: 2.7 V QG gate charge: 10.8 nC Minimum operating temperature: - 55 C Maximum operating temperature: + 150 C PD power dissipation: 29 W Channel mode: Enhancement Trade name: OptiMOS to configure: Single Height: 1.27 mm Length: 5.9 mm Series: OptiMOS 3 Transistor type: 1 N-Channel Width: 5.15 mm Trademark: Infineon Technologies Forward transconductance - Minimum: 8 S Descent time: 3 ns Product type: MOSFET Rise time: 3 ns Number of factory packages: five thousand Subcategory: MOSFETs Typical closing delay time: 13 ns Typical on delay time: 9 ns Part number alias: BSC44N1NS3GXT SP000482420 BSC440N10NS3GATMA1 Unit weight: 300 mg