IRFR5410TRPBF

manufacturer: Infineon Product category: MOSFET Installation style: SMD/SMT Package / box: TO-252-3 Transistor polarity: P-Channel Number of channels: 1 Channel VDS - drain source breakdown voltage: 100 V ID - continuous drain current: 13 A RDS on drain source on resistance: 205 mOhms VGS - gate source voltage: - 20 V, + 20 V VGS th gate source threshold voltage: 4 V QG gate charge: 58 nC Minimum operating temperature: - 55 C Maximum operating temperature: + 150 C PD power dissipation: 66 W Channel mode: Enhancement to configure: Single Height: 2.3 mm Length: 6.5 mm Transistor type: 1 P-Channel Type: HEXFET Power MOSFET Width: 6.22 mm Trademark: Infineon / IR Forward transconductance - Minimum: 3.2 S Descent time: 46 ns Product type: MOSFET Rise time: 58 ns Number of factory packages: two thousand Subcategory: MOSFETs Typical closing delay time: 45 ns Typical on delay time: 15 ns Unit weight: 330 mg