NTD5867NLT4G

manufacturer: ON Semiconductor Product category: MOSFET Installation style: SMD/SMT Package / box: TO-252-4 Transistor polarity: N-Channel Number of channels: 1 Channel VDS - drain source breakdown voltage: 60 V ID - continuous drain current: 20 A RDS on drain source on resistance: 39 mOhms VGS - gate source voltage: - 20 V, + 20 V VGS th gate source threshold voltage: 1.5 V QG gate charge: 15 nC Minimum operating temperature: - 55 C Maximum operating temperature: + 150 C PD power dissipation: 36 W Channel mode: Enhancement to configure: Single Transistor type: 1 N-Channel Trademark: ON Semiconductor Forward transconductance - Minimum: 8 S Descent time: 2.4 ns Product type: MOSFET Rise time: 12.6 ns Number of factory packages: two thousand and five hundred Subcategory: MOSFETs Typical closing delay time: 18.2 ns Typical on delay time: 6.5 ns Unit weight: 340 mg