RE1C002UNTCL

manufacturer: ROHM Semiconductor Product category: MOSFET Installation style: SMD/SMT Package / box: SOT-416-3 Transistor polarity: N-Channel Number of channels: 1 Channel VDS - drain source breakdown voltage: 20 V ID - continuous drain current: 200 mA RDS on drain source on resistance: 1.2 Ohms VGS - gate source voltage: - 8 V, + 8 V VGS th gate source threshold voltage: 1 V QG gate charge: - Minimum operating temperature: - 55 C Maximum operating temperature: + 150 C PD power dissipation: 150 mW Channel mode: Enhancement to configure: Single Transistor type: 1 N-Channel Trademark: ROHM Semiconductor Forward transconductance - Minimum: 400 ms Descent time: 10 ns Product type: MOSFET Rise time: 10 ns Number of factory packages: three thousand Subcategory: MOSFETs Typical closing delay time: 15 ns Typical on delay time: 5 ns Part number alias: RE1C002UN Unit weight: 2.400 mg